I. Product Overview

The integrated SEM-Raman system is a multimodal analysis platform that deeply combines the high-resolution morphological imaging capability of a Scanning Electron Microscope (SEM) with the chemical composition and structural analysis capability of Raman spectroscopy.

Within the same vacuum environment and identical observation area, this system enables simultaneous acquisition of nanoscale morphology, micro-area chemical composition, crystal structure and stress state, eliminating contamination and positioning errors caused by repeated sample transfers. It is widely applied in cutting-edge research and engineering fields including materials science, semiconductor devices, two-dimensional materials, energy materials and failure analysis.

Basic Parameter Configuration

• Spatial image resolution: 360 nm (X-Y axes)

• Three optional laser wavelengths: 532 nm, 785 nm, 488 nm

• Parallel layout design ensures no mutual interference between the electron microscope and Raman module, both operable independently

• Regions of interest (ROIs) observed under the electron microscope can be directly positioned under the Raman laser for high-precision point, line, mapping and 3D laser analysis, delivering truly co-located correlative characterization data

• All TESCAN electron microscope models (tungsten filament, field emission and FIB-SEM) can be configured into the RISE system

II. Functional Features

1. High-Resolution SEM Imaging: Supports secondary electron and backscattered electron imaging for nanoscale observation of surface morphology and microstructure.

2. In-situ Raman Spectroscopy Analysis: Acquires micro-area Raman spectra inside the SEM chamber, compatible with point scanning, line scanning and mapping scanning.

3. Precise Region Correlation: One-to-one matching between SEM images and Raman spectra to realize accurate correlative analysis of morphology, chemical composition and crystal structure.

4. In-situ & Quasi-in-situ Testing Capacity: Compatible with extended modules such as heating, bias voltage and stress loading.

5. High-Stability Optical Path Design: Special vacuum-compatible Raman optical system guarantees excellent signal-to-noise ratio and measurement repeatability.

6. Integrated Software Platform: Enables synchronous display of images and spectra, data overlay and quantitative analysis.

III. Application Scenarios & Fields

• Research on Two-Dimensional and Low-Dimensional Materials: Layer number, defect and stress analysis of graphene, TMDs, topological materials, etc.

• Semiconductors and Micro-Nano Devices: Wafer defect localization, stress distribution, impurity and phase transition analysis.

• Energy Materials: Microstructural and chemical characterization of lithium-ion batteries, sodium-ion batteries, solid-state batteries and catalytic materials.

• Failure Analysis and Quality Control: Localization of failure points and composition tracing for electronic devices.

• Nanomanufacturing and Microstructure Research: Correlative analysis of structure-property relationships for MEMS/NEMS devices.

IV. Technical Advantages

1. True Correlative Same-spot Analysis: Eliminates sample transfer and delivers highly reliable correlated data.

2. Multi-scale Coverage from Nanometer to Micrometer: Combines the nanoscale resolution of SEM and micro-region analysis capability of Raman spectroscopy.

3. High Integration & System Stability: Opto-mechatronic integrated design ensures stable long-term operation.

4. Wide Sample Compatibility: Suitable for conductive, semiconductor and partial non-conductive samples.

5. Greatly Improved Research Efficiency: Reduces repetitive testing procedures and accelerates research and engineering decision-making.

V. Technical Parameter Configuration

• Spatial image resolution: 360 nm (XY axes)

• Three optional laser wavelengths: 532 nm, 785 nm, 488 nm

• Parallel layout design prevents mutual interference between SEM and Raman modules, and both systems can operate independently

• Regions of Interest (ROIs) observed under the electron microscope can be directly aligned under the Raman laser for high-precision point, line, mapping and 3D laser analysis, enabling genuine co-located correlative data acquisition

• All TESCAN electron microscope models (including tungsten filament, field emission and FIB-SEM) can be upgraded into a RISE system

VI. Typical Models and Application Cases

Data chart

Appearance drawing